Semiconductor device and method for partial EMI shielding
US12431438B2 · kind B2 · utility
0Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Feb 13, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component. A vertical interconnect structure is disposed in the encapsulant. A shielding layer is formed over the encapsulant and vertical interconnect structure. A groove is formed in the shielding layer around the vertical interconnect structure. A portion of the shielding layer remains over the vertical interconnect structure as a contact pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.