Insulated gate bipolar transistor including trench Schottky electrode

US12432950B2 · kind B2 · utility

Assignee

• Hitachi Energy Ltd · CH

Inventors

• Florin Udrea · Cambridge, GB
• Marina Antoniou · Cambridge, GB
• Neophytos Lophitis · Hinckley, GB
• Chiara Corvasce · Bergdietikon, CH
• Luca De-Michielis · Aarau, CH
• Umamaheswara Vemulapati · Windisch, CH
• Uwe Badstuebner · Zürich, CH
• Munaf Rahimo · Uezwil, CH

Key dates

• Filing date: Nov 6, 2020
• Grant date: Sep 30, 2025
• Expiry date: Nov 14, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

An insulated gate bipolar transistor includes a source electrode, a collector electrode, a source layer, a base layer, a drift layer and a collector layer. Trench gate electrodes extend through the base layer into the drift layer. A channel is located between the source layer, the base layer and the drift layer. A trench Schottky electrode is adjacent to one of the trench gate electrodes and includes an electrically conductive Schottky layer arranged lateral to the base layer and extends through the base layer into the drift layer. The Schottky layer is electrically connected to the source electrode. Collection areas are located in the drift layer at a respective trench gate electrode bottom of the trench gate electrodes or of the trench Schottky electrode. The Schottky layer forms a Schottky contact to the collection area at a contact area.