Semiconductor device and method for manufacturing the same
US12432989B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Feb 3, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a vertical semiconductor element having a deep layer, a current dispersion layer, a base region, a high-concentration region, and a trench gate structure. The deep layer has multiple sections being apart to each other in one direction. The current dispersion layer is between adjacent two of the sections of the deep layer. The high-concentration region is on a portion of the base region. The trench gate structure includes a gate trench, a gate insulation film and a gate electrode. The current dispersion layer is at a bottom of the trench gate structure, and has an ion-implanted layer extending from a bottom portion of the gate trench to a bottom portion of the deep layer or a location below the bottom portion of the deep layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.