Semiconductor device including self-aligned contact and method of manufacturing the semiconductor device
US12433015B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Feb 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to some embodiments of the disclosure may include a fin type active pattern extending in a first direction, a plurality of gate structures on the fin type active pattern and extending in a second direction different from the first direction, a plurality of inter-contact insulation patterns on respective ones of the plurality of gate structures, a plurality of interlayer insulation layers on side surfaces of the plurality of gate structures, and a plurality of contact plugs respectively between pairs of the plurality of gate structures. The fin type active pattern may include a plurality of source/drains. Lower ends of the plurality of contact plugs may contact the plurality of source/drains. The plurality of gate structures may each include a first gate metal, a second gate metal, a gate capping layer, a gate insulation layer, a first spacer, and a second spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.