Fet and bipolar device and circuit process with maximum junction control
US3936929A · kind A · utility
6Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1974 |
| Grant date | Feb 10, 1976 |
| Priority date | — |
| Expiry date | Jun 26, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/145
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are improved field-effect and bipolar semiconductor devices and the method of making them, wherein maximum junction control provides highly predictable device parameters. Low temperature epitaxial depositions provide tight junction thickness and resistivity control, and an orientation dependent etch forms grooves circumscribing portions of the host substrate and overlying epitaxial layers to provide dielectrically isolated single crystalline mesas utilized in forming electronic devices. This is a division of application Ser. No. 275,116, filed July 26, 1972.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.