Kenneth E. Bean
23Patents
15h-index
29Co-inventors
81Inventor score
Filing activity: Jul 26, 1972 → May 10, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4855809A | Orthogonal chip mount system module and method | Emerging Cross-Sectional Technologies | 64 | Expired |
| US5250445A | Discretionary gettering of semiconductor circuits | Electricity | 64 | Expired |
| US5031072A | Baseboard for orthogonal chip mount | Electricity | 63 | Expired |
| US3969746A | Vertical multijunction solar cell | Emerging Cross-Sectional Technologies | 59 | Expired |
| US4922378A | Baseboard for orthogonal chip mount | Electricity | 49 | Expired |
| US4875086A | Silicon-on-insulator integrated circuits and method | Electricity | 45 | Expired |
| US5973783A | Fiber optic gyroscope coil lead dressing and method for forming the same | Physics | 45 | Expired |
| US4063271A | FET and bipolar device and circuit process with maximum junction control | Emerging Cross-Sectional Technologies | 33 | Expired |
| US5196378A | Method of fabricating an integrated circuit having active regions near a die edge | Emerging Cross-Sectional Technologies | 26 | Expired |
| US11028662B2 | Connector apparatus for subsea blowout preventer | Fixed Constructions | 24 | Active |
| US3989946A | Arrays for infrared image detection | Electricity | 18 | Expired |
| US4849370A | Anodizable strain layer for SOI semiconductor structures | Electricity | 16 | Expired |
| US4982263A | Anodizable strain layer for SOI semiconductor structures | Emerging Cross-Sectional Technologies | 16 | Expired |
| US4599247A | Semiconductor processing facility for providing enhanced oxidation rate | Electricity | 15 | Expired |
| US5089428A | Method for forming a germanium layer and a heterojunction bipolar transistor | Emerging Cross-Sectional Technologies | 15 | Expired |
| US4050979A | Process for thinning silicon with special application to producing silicon on insulator | Emerging Cross-Sectional Technologies | 11 | Expired |
| US3969749A | Substrate for dielectric isolated integrated circuit with V-etched depth grooves for lapping guide | Electricity | 11 | Expired |
| US4737470A | Method of making three dimensional structures of active and passive semiconductor components | Emerging Cross-Sectional Technologies | 8 | Expired |
| US3936929A | Fet and bipolar device and circuit process with maximum junction control | Emerging Cross-Sectional Technologies | 6 | Expired |
| US4663648A | Three dimensional structures of active and passive semiconductor components | Electricity | 1 | Expired |
| US9175551B2 | Connector apparatus for subsea blowout preventer | Fixed Constructions | 0 | Active |
| US10316606B2 | Connector apparatus for subsea blowout preventer | Fixed Constructions | 0 | Active |
| US9534467B2 | Connector apparatus for subsea blowout preventer | Fixed Constructions | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.