Process for simultaneous development and etch of photoresist and substrate
US3944421A · kind A · utility
10Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1973 |
| Grant date | Mar 16, 1976 |
| Priority date | — |
| Expiry date | Oct 3, 1993 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Photoresists are developed and the supporting substrate is etched simultaneously therewith by bringing the resist (after exposure) into physical contact with a fluid containing a developer for the resist and an etchant for the supporting substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.