LPE technique for reducing edge growth
US3950195A · kind A · utility
13Cited by
1References
10Claims
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Assignee
Inventors
Key dates
| Filing date | Feb 21, 1975 |
| Grant date | Apr 13, 1976 |
| Priority date | — |
| Expiry date | Feb 21, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02625
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described is a liquid phase epitaxy technique using conventional slider apparatus in which, after heating the source solution to saturation, the solution temperature is rapidly reduced so that supersaturation takes place but heterogeneous nucleation does not. The solution is allowed to reach convective equilibrium and only then is brought into contact with the substrate. Once in contact, the temperature is maintained constant so that convection currents in the solution are substantially reduced. This technique has several advantages: reduced edge growth, increased usable wafer area, and reduced wipe-off problems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.