Semiconductors covered by a polymeric heat resistant relief structure

US3953877A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Reiner Sigusch · Munich, DE
• Dietrich Widmann · Unterhaching, DE

Key dates

• Filing date: May 21, 1974
• Grant date: Apr 27, 1976
• Expiry date: May 21, 1994

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/19041
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Described are novel semiconductor structures having a protective passivating layer made from photo- or radiation cross-linking of selected reactive sites of a soluble pre-polymer which is a poly-addition or poly-condensation product of a polyfunctional carbocyclic and/or heterocyclic compound having reactive groups for condensation or addition as well as photoreactive or radiation-reactive groups capable of further polymerization or dimerization. Selected non-cross-linked portions of the passivating layer may be removed by dissolution to form contact points for various useful semiconductor and capacitor components.