Dietrich Widmann
28Patents
12h-index
34Co-inventors
81Inventor score
Filing activity: May 21, 1974 → May 18, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6459123B1 | Double gated transistor | Electricity | 96 | Expired |
| US4356622A | Method of producing low-resistance diffused regions in IC MOS semiconductor circuits in silicon-gate technology metal silicide layer formation | Emerging Cross-Sectional Technologies | 64 | Expired |
| US4382826A | Method of making MIS-field effect transistor having a short channel length | Electricity | 35 | Expired |
| US4562640A | Method of manufacturing stable, low resistance contacts in integrated semiconductor circuits | Emerging Cross-Sectional Technologies | 29 | Expired |
| US4291321A | MIS-field effect transistor having a short channel length and method of making the same | Electricity | 25 | Expired |
| US4047975A | Process for the production of a bipolar integrated circuit | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6262448A | Memory cell having trench capacitor and vertical, dual-gated transistor | Electricity | 20 | Expired |
| US3953877A | Semiconductors covered by a polymeric heat resistant relief structure | Electricity | 18 | Expired |
| US6319787A | Method for forming a high surface area trench capacitor | Electricity | 18 | Expired |
| US4211888A | Arrangement with several thermal elements in series connection | Electricity | 14 | Expired |
| US4108717A | Process for the production of fine structures consisting of a vapor-deposited material on a base | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4313256A | Method of producing integrated MOS circuits via silicon gate technology | Electricity | 12 | Expired |
| US6515319B2 | Field-effect-controlled transistor and method for fabricating the transistor | Electricity | 9 | Expired |
| US6686098B2 | Lithography method and lithography mask | Physics | 9 | Expired |
| US6124156A | Process for manufacturing a CMOS circuit with all-around dielectrically insulated source-drain regions | Electricity | 8 | Expired |
| US4352237A | Method for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodes | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5869860A | Ferroelectric memory device and method for producing the device | Electricity | 7 | Expired |
| US6022786A | Method for manufacturing a capacitor for a semiconductor arrangement | Electricity | 6 | Expired |
| US6232169A | Method for producing a capacitor | Electricity | 5 | Expired |
| US5989972A | Capacitor in a semiconductor configuration and process for its production | Electricity | 4 | Expired |
| US4090068A | Process for the automatic adjustment of semiconductor wafers | Electricity | 4 | Expired |
| US6503784B1 | Double gated transistor | Electricity | 3 | Expired |
| US6472767B1 | Static random access memory (SRAM) | Electricity | 3 | Expired |
| US4268563A | Radiation mask for producing structural configurations in photo-sensitive resists by X-ray exposure | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6635388B1 | Contact hole fabrication with the aid of mutually crossing sudden phase shift edges of a single phase shift mask | Physics | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.