Planar magnetron sputtering method and apparatus
US3956093A · kind A · utility
71Cited by
2References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 16, 1974 |
| Grant date | May 11, 1976 |
| Priority date | — |
| Expiry date | Dec 16, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3458
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A planar magnetron sputtering apparatus is provided with an additional, variable magnetic field normal to and substantially throughout the erosion region of a cathode plate. Application of the foregoing variable magnetic field effects continuous variations in the general location of the points at which magnetic lines of flux are parallel to the cathode plate which correspondingly results in variations in the points of maximum cathode plate erosion. By producing a less acute erosion pattern over a wider cathode plate area, a greater portion of the cathode plate material may be sputtered from any particular planar cathode plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.