Method of implantation of boron ions utilizing a boron oxide ion source
US3960605A · kind A · utility
19Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 1975 |
| Grant date | Jun 1, 1976 |
| Priority date | — |
| Expiry date | Jan 23, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of ion implantation, in which boron ions are generated by introducing a boron-oxide containing material vapor into a conventional gas discharge ion generation source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.