Method of growing by epitaxy from the vapor phase a material on substrate of a material which is not stable in air
US3966513A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1974 |
| Grant date | Jun 29, 1976 |
| Priority date | — |
| Expiry date | Feb 8, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of epitaxially growing a monocrystalline layer on a substrate that is oxidizable in air in which an epitaxial layer of the oxidizable material is grown on a support of a monocrystalline material having the desired crystalline structure, enough of the support material is then removed to enable removal by etching of the support from the layer of the oxidizable material, the support and attached layer are then introduced into a non-oxidizing atmosphere where the support is etched away from the layer of the oxidizable material and a monocrystalline layer of another material is grown by epitaxial deposition on the exposed surface of the surface of the layer of the oxidizable material exposed by etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.