Jean Philippe Hallais
4Patents
3h-index
5Co-inventors
36Inventor score
Filing activity: Feb 8, 1974 → Mar 4, 1977
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4144116A | Vapor deposition of single crystal gallium nitride | Emerging Cross-Sectional Technologies | 69 | Expired |
| US3966513A | Method of growing by epitaxy from the vapor phase a material on substrate of a material which is not stable in air | Emerging Cross-Sectional Technologies | 11 | Expired |
| US4038576A | Photocathode support of corundum with layer of barium boroaluminate or calcium boroaluminate glass | Electricity | 5 | Expired |
| US4086109A | Method for the epitaxial growth of III-V compounds at homogeneous low temperature utilizing a single flat temperature zone | Chemistry; Metallurgy | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.