Semiconductor controlled rectifier
US3967308A · kind A · utility
6Cited by
13References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1974 |
| Grant date | Jun 29, 1976 |
| Priority date | — |
| Expiry date | Mar 15, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/291
Abstract
A thyristor with a gate electrode formed on the side of an anode electrode. An auxiliary region of a large lateral resistance is formed in a surface layer of the substrate between the anode and gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.