Tsutomu Yatsuo
41Patents
11h-index
55Co-inventors
78Inventor score
Filing activity: Feb 5, 1974 → Feb 26, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5736753A | Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide | Electricity | 36 | Expired |
| US4100562A | Light coupled semiconductor device and method of manufacturing the same | Electricity | 30 | Expired |
| US6353236B1 | Semiconductor surge absorber, electrical-electronic apparatus, and power module using the same | Electricity | 22 | Expired |
| US6169672A | Power converter with clamping circuit | Emerging Cross-Sectional Technologies | 19 | Expired |
| US4691223A | Semiconductor device having high breakdown voltage | Emerging Cross-Sectional Technologies | 17 | Expired |
| US3947864A | Diode-integrated thyristor | Electricity | 14 | Expired |
| US4016593A | Bidirectional photothyristor device | Electricity | 14 | Expired |
| US4016592A | Light-activated semiconductor-controlled rectifier | Electricity | 13 | Expired |
| US4542398A | Semiconductor devices of multi-emitter type | Electricity | 13 | Expired |
| US4443810A | Gate turn-off amplified thyristor with non-shorted auxiliary anode | Electricity | 12 | Expired |
| US4110781A | Bidirectional grooved thyristor fired by activation of the beveled surfaces | Electricity | 11 | Expired |
| US3978514A | Diode-integrated high speed thyristor | Electricity | 10 | Expired |
| US6180959A | Static induction semiconductor device, and driving method and drive circuit thereof | Electricity | 10 | Expired |
| US4388635A | High breakdown voltage semiconductor device | Electricity | 10 | Expired |
| US6566726B1 | Semiconductor device and power converter using the same | Electricity | 8 | Expired |
| US4216487A | Bidirectional light-activated thyristor having substrate optical isolation | Electricity | 7 | Expired |
| US5324967A | Turn off type semiconductor device, method of producing the same and the power conversion apparatus employing the same | Electricity | 7 | Expired |
| US4626888A | Gate turn-off thyristor | Electricity | 7 | Expired |
| US8003991B2 | Silicon carbide MOS field effect transistor with built-in Schottky diode and method for fabrication thereof | Electricity | 7 | Active |
| US3967308A | Semiconductor controlled rectifier | Electricity | 6 | Expired |
| US6384428B1 | Silicon carbide semiconductor switching device | Electricity | 6 | Expired |
| US5021855A | Gate turn-off thyristor | Electricity | 5 | Expired |
| US4825270A | Gate turn-off thyristor | Electricity | 4 | Expired |
| US4651189A | Semiconductor device provided with electrically floating control electrode | Electricity | 3 | Expired |
| US7811874B2 | Method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device | Emerging Cross-Sectional Technologies | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.