Injection laser with integral modulator
US3968455A · kind A · utility
2Cited by
1References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 5, 1974 |
| Grant date | Jul 6, 1976 |
| Priority date | — |
| Expiry date | Mar 5, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The semiconductor target of a GEISHA or EBIC device is integrated with an jection laser diode to form a unitary structure. The electrons created in the GEISHA by impact ionization are swept directly into the injection laser to cause lasing action. This eliminates the need for transmission line connecting the GEISHA to the injection laser diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.