Max N. Yoder
27Patents
14h-index
3Co-inventors
74Inventor score
Filing activity: Mar 6, 1970 → Mar 29, 1996
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5281274A | Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors | Emerging Cross-Sectional Technologies | 701 | Expired |
| US5225366A | Apparatus for and a method of growing thin films of elemental semiconductors | Emerging Cross-Sectional Technologies | 649 | Expired |
| US4756794A | Atomic layer etching | Electricity | 562 | Expired |
| US4409608A | Recessed interdigitated integrated capacitor | Electricity | 122 | Expired |
| US5311055A | Trenched bipolar transistor structures | Electricity | 111 | Expired |
| US4495511A | Permeable base transistor structure | Electricity | 32 | Expired |
| US5326992A | Silicon carbide and SiCAlN heterojunction bipolar transistor structures | Electricity | 25 | Expired |
| US4325181A | Simplified fabrication method for high-performance FET | Electricity | 23 | Expired |
| US4391651A | Method of forming a hyperabrupt interface in a GaAs substrate | Emerging Cross-Sectional Technologies | 22 | Expired |
| US4929986A | High power diamond traveling wave amplifier | Electricity | 19 | Expired |
| US5404835A | Method of making large area single crystalline diamond films | Chemistry; Metallurgy | 17 | Expired |
| US4710478A | Method for making germanium/gallium arsenide high mobility complementary logic transistors | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5363798A | Large area semiconductor wafers | Emerging Cross-Sectional Technologies | 15 | Expired |
| US4344980A | Superior ohmic contacts to III-V semiconductor by virtue of double donor impurity | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5550425A | Negative electron affinity spark plug | Electricity | 12 | Expired |
| US4380022A | Monolithic fully integrated class B push-pull microwave GaAs MESFET with differential inputs and outputs with reduced Miller effect | Electricity | 7 | Expired |
| US5773933A | Broadband traveling wave amplifier with an input stripline cathode and an output stripline anode | Electricity | 5 | Expired |
| US4914743A | Yoked orthogonally distributed equal reactance non-coplanar traveling wave amplifier | Electricity | 4 | Expired |
| US4947220A | Yoked, orthogonally distributed equal reactance amplifier | Electricity | 4 | Expired |
| US4671845A | Method for producing high quality germanium-germanium nitride interfaces for germanium semiconductors and device produced thereby | Emerging Cross-Sectional Technologies | 4 | Expired |
| US4310843A | Electron beam controlled array antenna | Electricity | 4 | Expired |
| US5334853A | Semiconductor cold electron emission device | Electricity | 2 | Expired |
| US3968455A | Injection laser with integral modulator | Electricity | 2 | Expired |
| US4263531A | Electron beam-semiconductor diode hybrid device for phase control | Electricity | 2 | Expired |
| USH368H | Field-effect transistor | General | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.