Gate modulated bipolar transistor
US3979769A · kind A · utility
2Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1974 |
| Grant date | Sep 7, 1976 |
| Priority date | — |
| Expiry date | Oct 16, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/241
Abstract
A Gate Modulated BiPolar Transistor, or GAMBIT, is a three terminal negative resistance device. A load is connected between the emitter and collector terminals and the magnitude of the negative resistance is controlled by the voltage on the gate terminal. An increase in the output voltage modulates the resistance of the gate which decreases the output current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.