Surinder Krishna
14Patents
9h-index
11Co-inventors
65Inventor score
Filing activity: Apr 26, 1973 → Nov 20, 1989
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US3988771A | Spatial control of lifetime in semiconductor device | Electricity | 28 | Expired |
| US4734382A | BiCMOS process having narrow bipolar emitter and implanted aluminum isolation | Electricity | 27 | Expired |
| US3982269A | Semiconductor devices and method, including TGZM, of making same | Electricity | 21 | Expired |
| US4512816A | High-density IC isolation technique capacitors | Electricity | 15 | Expired |
| US4060821A | Field controlled thyristor with buried grid | Electricity | 15 | Expired |
| US4032961A | Gate modulated bipolar transistor | Electricity | 15 | Expired |
| US4804634A | Integrated circuit lateral transistor structure | Electricity | 15 | Expired |
| US4648909A | Fabrication process employing special masks for the manufacture of high speed bipolar analog integrated circuits | Emerging Cross-Sectional Technologies | 13 | Expired |
| US4639274A | Method of making precision high-value MOS capacitors | Electricity | 11 | Expired |
| US4581626A | Thyristor cathode and transistor emitter structures with insulator islands | Electricity | 9 | Expired |
| US3988772A | Current isolation means for integrated power devices | Electricity | 8 | Expired |
| US3945028A | High speed, high power plasma thyristor circuit | Physics | 3 | Expired |
| US3979769A | Gate modulated bipolar transistor | Electricity | 2 | Expired |
| US4958210A | High voltage integrated circuits | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.