Semiconductor devices and method, including TGZM, of making same
US3982269A · kind A · utility
21Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1974 |
| Grant date | Sep 21, 1976 |
| Priority date | — |
| Expiry date | Nov 22, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A homogeneous integrated power structure embodies solid state control or signal devices and power devices integrated monolithically to achieve optimum physical characteristics of each device embodied therein at economical cost of manufacturing the same. The devices are electrically isolated from each other by a P-N junction isolation grid produced by the thermomigration of metal-rich wires through a semiconductor substrate by thermal gradient zone melting processing techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.