Spatial control of lifetime in semiconductor device
US3988771A · kind A · utility
28Cited by
5References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 28, 1974 |
| Grant date | Oct 26, 1976 |
| Priority date | — |
| Expiry date | May 28, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Deep level impurities such, for example, as gold, platinum, silver, nickel and copper, are introduced into selected regions of semiconductor devices by directional solidification to reduce the charge recombination lifetime and therefore the turn-off time of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.