Current isolation means for integrated power devices
US3988772A · kind A · utility
8Cited by
5References
44Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 28, 1974 |
| Grant date | Oct 26, 1976 |
| Priority date | — |
| Expiry date | May 28, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The minority carrier lifetime is drastically reduced in an integrated semiconductor power device by introducing deep level impurities such, for example, as gold, silver, platinum, nickel and copper into selected regions of the device by Thermal Gradient Zone Melting processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.