Magnesium-titanate-comprising spinel single crystal substrate for semiconductor devices
US3990902A · kind A · utility
10Cited by
4References
6Claims
0Family size
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Key dates
| Filing date | Jul 29, 1975 |
| Grant date | Nov 9, 1976 |
| Priority date | — |
| Expiry date | Jul 29, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02532
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A spinel single crystal substrate for epitaxial growth thereon of a semiconductor layer to manufacture semiconductor devices. Magnesium titanate is substituted for at least a portion of magnesium aluminate of which the spinel essentially consist in general. A preferred mol ratio of the magnesium titanate to the magnesium aluminate is between 5:95 and 40:60 when a silicon layer is to be epitaxially grown on the substrate as the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.