SEMICONDUCTOR RESEARCH CORPORATION
30Patents
0Active
30Granted
34Portfolio score
Filing activity: Jan 10, 1972 → Apr 16, 2004
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7015546B2 | Deterministically doped field-effect devices and methods of making same | Emerging Cross-Sectional Technologies | 121 | Expired |
| US4540466A | Method of fabricating semiconductor device by dry process utilizing photochemical reaction, and apparatus therefor | Electricity | 53 | Expired |
| US4377817A | Semiconductor image sensors | Electricity | 38 | Expired |
| US4454526A | Semiconductor image sensor and the method of operating the same | Electricity | 35 | Expired |
| US4177321A | Single crystal of semiconductive material on crystal of insulating material | Emerging Cross-Sectional Technologies | 29 | Expired |
| US4408304A | Semiconductor memory | Electricity | 23 | Expired |
| US4126731A | Sapphire single crystal substrate for semiconductor devices | Emerging Cross-Sectional Technologies | 18 | Expired |
| US4320410A | GaAs Semiconductor device | Electricity | 16 | Expired |
| US4504865A | Image signal readout methd for solid-state image sensor | Electricity | 16 | Expired |
| US7144803B2 | Methods of forming boron carbo-nitride layers for integrated circuit devices | Electricity | 14 | Expired |
| US4086611A | Static induction type thyristor | Emerging Cross-Sectional Technologies | 13 | Expired |
| US4171995A | Epitaxial deposition process for producing an electrostatic induction type thyristor | Emerging Cross-Sectional Technologies | 11 | Expired |
| US4448525A | Crystal defects analyzer | Physics | 11 | Expired |
| US4641167A | Semiconductor optoelectro transducer | Electricity | 10 | Expired |
| US4038610A | Luminosity control system employing semiconductor lasers | Electricity | 10 | Expired |
| US3990902A | Magnesium-titanate-comprising spinel single crystal substrate for semiconductor devices | Electricity | 10 | Expired |
| US4198645A | Semiconductor controlled rectifier having gate grid dividing surrounding zone into two different impurity concentration sections | Electricity | 8 | Expired |
| US4629901A | Photo coupler with static induction transistor type detector | Electricity | 5 | Expired |
| US6509138B2 | Solventless, resistless direct dielectric patterning | Physics | 5 | Expired |
| US6946736B2 | Electrical device including dielectric layer formed by direct patterning process | Physics | 5 | Expired |
| US4479845A | Vapor growth with monitoring | Chemistry; Metallurgy | 5 | Expired |
| US4292374A | Sapphire single crystal substrate for semiconductor devices | Emerging Cross-Sectional Technologies | 4 | Expired |
| US4506281A | GaAs semiconductor device | Electricity | 3 | Expired |
| US4608587A | Semiconductor optoelectro transducer | Electricity | 2 | Expired |
| US3946270A | Signal collecting and distributing systems | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.