Novel integratable Schottky Barrier structure and a method for the fabrication thereof
US3995301A · kind A · utility
17Cited by
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12Claims
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Key dates
| Filing date | Nov 1, 1974 |
| Grant date | Nov 30, 1976 |
| Priority date | — |
| Expiry date | Nov 1, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/617
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel Schottky Barrier structure which is integratable with standard integrated circuits comprising a metal layer of Al.sub.2 Pt in contact with a high resistivity semiconductor region. The structure is fabricated by first forming a platinum silicide layer on said silicon substrate and then applying a metallic layer comprising aluminum on said first layer, after which the structure is sintered at a temperature of at least 400.degree. C. for at least an hour.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.