Ingrid E. Magdo
31Patents
17h-index
12Co-inventors
74Inventor score
Filing activity: Sep 20, 1972 → Mar 4, 1988
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4359816A | Self-aligned metal process for field effect transistor integrated circuits | Electricity | 55 | Expired |
| US3954523A | Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation | Emerging Cross-Sectional Technologies | 43 | Expired |
| US4256532A | Method for making a silicon mask | Emerging Cross-Sectional Technologies | 42 | Expired |
| US3955269A | Fabricating high performance integrated bipolar and complementary field effect transistors | Electricity | 37 | Expired |
| US4400865A | Self-aligned metal process for integrated circuit metallization | Emerging Cross-Sectional Technologies | 37 | Expired |
| US4357622A | Complementary transistor structure | Electricity | 36 | Expired |
| US4396933A | Dielectrically isolated semiconductor devices | Electricity | 32 | Expired |
| US4805683A | Method for producing a plurality of layers of metallurgy | Emerging Cross-Sectional Technologies | 32 | Expired |
| US4424621A | Method to fabricate stud structure for self-aligned metallization | Electricity | 31 | Expired |
| US3944447A | Method for fabrication of integrated circuit structure with full dielectric isolation utilizing selective oxidation | Emerging Cross-Sectional Technologies | 27 | Expired |
| US4758528A | Self-aligned metal process for integrated circuit metallization | Electricity | 27 | Expired |
| US4023197A | Integrated circuit chip carrier and method for forming the same | Electricity | 26 | Expired |
| US4452645A | Method of making emitter regions by implantation through a non-monocrystalline layer | Emerging Cross-Sectional Technologies | 23 | Expired |
| US4322883A | Self-aligned metal process for integrated injection logic integrated circuits | Emerging Cross-Sectional Technologies | 22 | Expired |
| US4485552A | Complementary transistor structure and method for manufacture | Electricity | 19 | Expired |
| US4016596A | High performance integrated bipolar and complementary field effect transistors | Electricity | 18 | Expired |
| US4002511A | Method for forming masks comprising silicon nitride and novel mask structures produced thereby | Emerging Cross-Sectional Technologies | 18 | Expired |
| US3995301A | Novel integratable Schottky Barrier structure and a method for the fabrication thereof | Electricity | 17 | Expired |
| US4044454A | Method for forming integrated circuit regions defined by recessed dielectric isolation | Emerging Cross-Sectional Technologies | 17 | Expired |
| US4513303A | Self-aligned metal field effect transistor integrated circuit | Electricity | 16 | Expired |
| US4028717A | Field effect transistor having improved threshold stability | Emerging Cross-Sectional Technologies | 14 | Expired |
| US4534806A | Method for manufacturing vertical PNP transistor with shallow emitter | Electricity | 12 | Expired |
| US4005471A | Semiconductor resistor having a high value resistance for use in an integrated circuit semiconductor device | Electricity | 11 | Expired |
| US4608589A | Self-aligned metal structure for integrated circuits | Electricity | 10 | Expired |
| US4089712A | Epitaxial process for the fabrication of a field effect transistor having improved threshold stability | Emerging Cross-Sectional Technologies | 10 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.