Ohmic contacts to p-type mercury cadmium telluride
US4000508A · kind A · utility
8Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1975 |
| Grant date | Dec 28, 1976 |
| Priority date | — |
| Expiry date | Jul 17, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15747
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.