Eric S. Johnson
14Patents
5h-index
10Co-inventors
63Inventor score
Filing activity: Jul 17, 1975 → Jun 12, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4085500A | Ohmic contacts to p-type mercury cadmium telluride | Electricity | 18 | Expired |
| US4105478A | Doping HgCdTe with Li | Electricity | 12 | Expired |
| US4089714A | Doping mercury cadmium telluride with aluminum or silicon | Emerging Cross-Sectional Technologies | 8 | Expired |
| US4000508A | Ohmic contacts to p-type mercury cadmium telluride | Electricity | 8 | Expired |
| US6429103B1 | MOCVD-grown emode HIGFET buffer | Emerging Cross-Sectional Technologies | 6 | Expired |
| US4105477A | Doping of (Hg,Cd)Te with a Group VA element | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5475311A | Ionization gas analyzer and method | Physics | 5 | Expired |
| US4994408A | Epitaxial film growth using low pressure MOCVD | Emerging Cross-Sectional Technologies | 4 | Expired |
| US4105479A | Preparation of halogen doped mercury cadmium telluride | Emerging Cross-Sectional Technologies | 2 | Expired |
| US4086106A | Halogen-doped Hg,Cd,Te | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6821829B1 | Method of manufacturing a semiconductor component and semiconductor component thereof | Electricity | 2 | Expired |
| US4717597A | Method for providing impurities into a carrier gas line | Emerging Cross-Sectional Technologies | 1 | Expired |
| US4089713A | Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy | Electricity | 1 | Expired |
| US4087294A | Lithium doped mercury cadmium telluride | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.