Controlling the oxygen content of Czochralski process of silicon crystals by sandblasting silica vessel
US4010064A · kind A · utility
16Cited by
2References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 1975 |
| Grant date | Mar 1, 1977 |
| Priority date | — |
| Expiry date | May 27, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The oxygen content of silicon crystals, which are drawn from a silicon melt contained in a silica vessel according to the Czochralski process, is controlled by changing the surface characteristics of the portion of the silica vessel which is in contact with the melt so as to provide an increased oxygen concentration in the melt during the crystal drawing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.