Determination of thermal impedances of bonding layers in infrared photoconductors
US4012691A · kind A · utility
3Cited by
3References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 8, 1976 |
| Grant date | Mar 15, 1977 |
| Priority date | — |
| Expiry date | Apr 8, 1996 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B7/06
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of determining thermal constants of bonding layers of an infrared ensor which comprises cooling a bonded layer sensor to 77.degree.K and then heating the sensor by a quick pulse of heat. The electrical resistance of the sensor is measured and the measurement continued to determine a thermal profile. The measured thermal profile is compared with a known profile to determine thickness of the bonding layers and the material layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.