Roger E. Allen
13Patents
9h-index
10Co-inventors
65Inventor score
Filing activity: Apr 8, 1976 → Oct 30, 1992
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5084880A | Erbium-doped fluorozirconate fiber laser pumped by a diode laser source | Electricity | 97 | Expired |
| US4967416A | Thulium-doped fluorozirconate fiber laser pumped by a diode laser source | Electricity | 51 | Expired |
| US4117329A | Room-temperature, thin-film, PbS photoconductive detector hardened against laser damage | Electricity | 27 | Expired |
| US4295989A | Luminescent hafnia composition | Chemistry; Metallurgy | 19 | Expired |
| US4284962A | Excimer-pumped four level blue-green solid state laser | Electricity | 13 | Expired |
| US5038353A | Method and apparatus for lasing | Electricity | 13 | Expired |
| US5313477A | Rare earth ion doped CW cascade fiber laser | Electricity | 11 | Expired |
| US5014279A | Laser diode pumped, erbium-doped, solid state laser with high slope efficiency | Electricity | 10 | Expired |
| US4347485A | Excimer-pumped blue-green laser | Electricity | 9 | Expired |
| US4167712A | Praseodymium blue-green laser system | Electricity | 8 | Expired |
| US4126033A | Determination of thermal conductances of bonding layers in infrared photoconductor arrays | Physics | 7 | Expired |
| US4012691A | Determination of thermal impedances of bonding layers in infrared photoconductors | Physics | 3 | Expired |
| US4217547A | Method for determining the compensation density in n-type narrow-gap semiconductors | Physics | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.