Self-protected semiconductor device
US4012761A · kind A · utility
13Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 1976 |
| Grant date | Mar 15, 1977 |
| Priority date | — |
| Expiry date | Apr 19, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/263
Abstract
A self-protected thyristor structure is provided having an auxiliary gate region peripherally located with respect to the semiconductor device so as to provide for the controlled turn-on of the device at the edge thereof in response to increasing edge current densities at the onset of avalanche breakdown. An auxiliary pilot thyristor is provided substantially surrounding the main thyristor structure and including an annular gate electrode surrounding the auxiliary pilot thyristor structure to insure that turn-on occurs substantially simultaneously throughout the extent of the pilot thyristor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.