Armand P. Ferro
28Patents
16h-index
27Co-inventors
81Inventor score
Filing activity: Aug 18, 1975 → Dec 18, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4828224A | Chemical vapor deposition system | Emerging Cross-Sectional Technologies | 485 | Expired |
| US4219760A | SEF Lamp dimming | Emerging Cross-Sectional Technologies | 161 | Expired |
| US5080549A | Wafer handling system with Bernoulli pick-up | Emerging Cross-Sectional Technologies | 103 | Expired |
| US5324155A | Wafer handling system with bernoulli pick-up | Emerging Cross-Sectional Technologies | 72 | Expired |
| US5435682A | Chemical vapor desposition system | Emerging Cross-Sectional Technologies | 50 | Expired |
| US5020475A | Substrate handling and transporting apparatus | Chemistry; Metallurgy | 43 | Expired |
| US5092728A | Substrate loading apparatus for a CVD process | Chemistry; Metallurgy | 42 | Expired |
| US4145708A | Power module with isolated substrates cooled by integral heat-energy-removal means | Electricity | 38 | Expired |
| US7648579B2 | Substrate support system for reduced autodoping and backside deposition | Electricity | 30 | Expired |
| US6242718A | Wafer holder | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6749687B1 | In situ growth of oxide and silicon layers | Electricity | 22 | Expired |
| US4099998A | Method of making zener diodes with selectively variable breakdown voltages | Emerging Cross-Sectional Technologies | 21 | Expired |
| US4037245A | Electric field controlled diode with a current controlling surface grid | Electricity | 20 | Expired |
| US5156521A | Method for loading a substrate into a GVD apparatus | Chemistry; Metallurgy | 18 | Expired |
| US4253047A | Starting electrodes for solenoidal electric field discharge lamps | Electricity | 16 | Expired |
| US4047220A | Bipolar transistor structure having low saturation resistance | Electricity | 16 | Expired |
| US8088225B2 | Substrate support system for reduced autodoping and backside deposition | Electricity | 13 | Active |
| US4012761A | Self-protected semiconductor device | Electricity | 13 | Expired |
| US4257058A | Package for radiation triggered semiconductor device and method | Electricity | 7 | Expired |
| US4053922A | Light triggered thyristor having controlled turn on delay | Electricity | 6 | Expired |
| US4012683A | Method and apparatus for reducing inverter no-load losses | Electricity | 5 | Expired |
| US4233541A | Start winding for solenoidal electric field discharge lamps | Electricity | 3 | Expired |
| US7112538B2 | In situ growth of oxide and silicon layers | Electricity | 3 | Expired |
| US7105055B2 | In situ growth of oxide and silicon layers | Electricity | 3 | Expired |
| US4739387A | Amplifying gate thyristor having high gate sensitivity and high dv/dt rating | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.