Non-volatile metal nitride oxide semiconductor device
US4017888A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1975 |
| Grant date | Apr 12, 1977 |
| Priority date | — |
| Expiry date | Dec 31, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A metal nitride oxide semiconductor device capable of use within a memory cell, having a more heavily doped region of the same type as the substrate provided directly under the channel of the depletion mode device. Application of a positive write voltage to the gate of the device, with the substrate at 0 volts potential and the source and drain biased to a suitable positive level, results in avalanche operation of the device whereby charge is stored in a nitride oxide interface under the gate, thereby converting the device to enhancement mode operation. The charge can be removed with the source and drain biased to the 0 volt potential of the substrate and a positive erase signal applied to the gate. A four device memory cell is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.