Inventor · Scottsdale, AZ, US

William S. Johnson

14Patents
7h-index
10Co-inventors
55Inventor score

Filing activity: Oct 18, 1974 → Jun 22, 1979

Most-cited inventions

PatentTitleAreaCited byStatus
US4203158A Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same Electricity 249 Expired
US4017888A Non-volatile metal nitride oxide semiconductor device Electricity 102 Expired
US4078947A Method for forming a narrow channel length MOS field effect transistor Emerging Cross-Sectional Technologies 39 Expired
US4266283A Electrically alterable read-mostly memory Physics 37 Expired
US3976511A Method for fabricating integrated circuit structures with full dielectric isolation by ion bombardment Emerging Cross-Sectional Technologies 29 Expired
US3983572A Semiconductor devices Electricity 10 Expired
US4350991A Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance Electricity 8 Expired
US4189431A Alkinyl terminating groups in biogenetic-like cyclizations to steroids Chemistry; Metallurgy 6 Expired
US3946419A Field effect transistor structure for minimizing parasitic inversion and process for fabricating Electricity 4 Expired
US4117234A Intermediate in the synthesis of estrone Emerging Cross-Sectional Technologies 3 Expired
US4055603A Alkinyl terminating groups in biogenetic-like cyclizations to steroids Chemistry; Metallurgy 3 Expired
US4219489A Synthesis of steroids Chemistry; Metallurgy 3 Expired
US4032579A 11-Substituted steroids and intermediates Chemistry; Metallurgy 2 Expired
US4064185A Olefinically unsaturated substituents at C-11 of steroid cyclization precursors Chemistry; Metallurgy 1 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.