Patent · US Expired

Method of producing homogeneously doped p-conductive semiconductor materials

US4025365A · kind A · utility

7Cited by

2References

8Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Joachim Martin
Ernst Haas · Buckenhof, DE
Konrad Reuschel
Manfred Schnoller · Haimhausen, DE

Key dates

Filing date	Aug 11, 1975
Grant date	May 24, 1977
Priority date	—
Expiry date	Aug 11, 1995

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/165
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A homogeneously doped p-conductive semiconductor material is produced by irradiating a desired semiconductor material with .gamma.-photons which trigger nuclear reactions within such irradiated material to form dopant atoms therein.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.