Ernst Haas
10Patents
5h-index
16Co-inventors
63Inventor score
Filing activity: Nov 6, 1974 → Jun 15, 1998
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US3967982A | Method of doping a semiconductor layer | Emerging Cross-Sectional Technologies | 15 | Expired |
| US4025365A | Method of producing homogeneously doped p-conductive semiconductor materials | Emerging Cross-Sectional Technologies | 7 | Expired |
| US4042454A | Method of producing homogeneously doped n-type Si monocrystals by thermal neutron radiation | Emerging Cross-Sectional Technologies | 7 | Expired |
| US4119441A | Method for the production of n-doped silicon with a dish-shaped profile of specific resistance in a radial direction | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6699439B1 | Storage container for radioactive material | Emerging Cross-Sectional Technologies | 5 | Expired |
| US4728371A | Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation | Emerging Cross-Sectional Technologies | 2 | Expired |
| US5732366A | Method of reprocessing metal parts radioactively contaminated with uranium | Physics | 1 | Expired |
| US4048508A | Apparatus for doping a semiconductor crystalline rod | Physics | 1 | Expired |
| US5198128A | Waste disposal site, in particular for the ultimate disposal of radioactive substances | Emerging Cross-Sectional Technologies | 1 | Expired |
| US5998689A | Method for recycling contaminated metal parts | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.