Growth of III-V layers containing arsenic, antimony and phosphorus, and device uses
US4032951A · kind A · utility
14Cited by
4References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 13, 1976 |
| Grant date | Jun 28, 1977 |
| Priority date | — |
| Expiry date | Apr 13, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/936
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gallium arsenide antimonide phosphide (GaAsSbP) has been successfully grown on a gallium arsenide substrate by liquid phase epitaxy. A critical amount of phosphorus initially in growth solution is depleted with consequent grading of lattice constant and bandgap in the epitaxially grown layer. The substrate and graded layer as a subassembly are well suited for use in electronic devices such as double heterostructure lasers, light-emitting diodes, Schottky barrier diodes, and p-n junction photodiodes in the near-infrared low loss region of optical fibers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.