Robert E. Nahory
7Patents
5h-index
11Co-inventors
56Inventor score
Filing activity: Jun 5, 1975 → Jun 4, 1993
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US3995303A | Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector | Emerging Cross-Sectional Technologies | 24 | Expired |
| US4032951A | Growth of III-V layers containing arsenic, antimony and phosphorus, and device uses | Emerging Cross-Sectional Technologies | 14 | Expired |
| US4072544A | Growth of III-V layers containing arsenic, antimony and phosphorus | Emerging Cross-Sectional Technologies | 13 | Expired |
| US4374867A | Method of growing oxide layer on indium gallium arsenide | Electricity | 13 | Expired |
| US4203124A | Low noise multistage avalanche photodetector | Electricity | 11 | Expired |
| US5246878A | Capping layer preventing deleterious effects of As--P exchange | Emerging Cross-Sectional Technologies | 4 | Expired |
| US5302847A | Semiconductor heterostructure having a capping layer preventing deleterious effects of As-P exchange | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.