Gate modulated bipolar transistor
US4032961A · kind A · utility
15Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1976 |
| Grant date | Jun 28, 1977 |
| Priority date | — |
| Expiry date | Aug 23, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
Abstract
Geometrical design criteria are disclosed for a Gate Modulated BiPolar Transistor, or GAMBIT, which is a three terminal variable negative resistance device. The GAMBIT is a planar, interdigited, integrated device whose electrical characteristics show a voltage controlled negative resistance between two of its terminals. The magnitude of the negative resistance is controlled by the variation of the applied bias to the third terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.