Control of oxygen in silicon crystals
US4040895A · kind A · utility
19Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1975 |
| Grant date | Aug 9, 1977 |
| Priority date | — |
| Expiry date | Oct 22, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/916
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The seed to tail oxygen concentration gradient in silicon crystals, which are drawn from a silicon melt contained in a silica vessel according to the Czochralski process, is controlled by a process employing stop-go crucible rotation to provide fluid shearing at the melt-crucible interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.