Patent · US Expired

Method of producing homogeneously doped n-type Si monocrystals by thermal neutron radiation

US4042454A · kind A · utility

7Cited by

7References

1Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Ernst Haas · Buckenhof, DE
Joachim Martin
Konrad Reuschel
Manfred Schnoeller · Unterschleißheim, DE

Key dates

Filing date	Nov 6, 1974
Grant date	Aug 16, 1977
Priority date	—
Expiry date	Nov 6, 1994

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/165
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Si monocrystals of the n-type are produced by zone melting polycrystalline Si rods under conditions sufficient to produce monocrystal rods, measuring the specific conductivity of such monocrystal rods and subjecting such monocrystal rods to a controlled radiation by thermal neutrons based on the measured conductivity to produce a desired degree of n-conductivity in the ultimately attained rods.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.