High voltage transistor with high gain
US4042947A · kind A · utility
6Cited by
6References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 1976 |
| Grant date | Aug 16, 1977 |
| Priority date | — |
| Expiry date | Jan 6, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/133
Abstract
A transistor device is described in which an NPN semiconductor structure has a specially adapted N-type emitter zone and associated electrode. The emitter zone is produced by etching a cavity in one major surface of the semiconductor body followed by diffusion of N-type dopant material. Emitter, base and collector electrodes are then affixed to the appropriate surfaces of the body to provide electrical and thermal contact thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.