Philip L. Hower
51Patents
8h-index
39Co-inventors
78Inventor score
Filing activity: Jan 6, 1976 → Jan 7, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6958515B2 | N-channel LDMOS with buried p-type region to prevent parasitic bipolar effects | Electricity | 63 | Expired |
| US7268045B2 | N-channel LDMOS with buried P-type region to prevent parasitic bipolar effects | Electricity | 38 | Expired |
| US5164813A | New diode structure | Electricity | 18 | Expired |
| US4901120A | Structure for fast-recovery bipolar devices | Electricity | 17 | Expired |
| US4231059A | Technique for controlling emitter ballast resistance | Electricity | 16 | Expired |
| US4551353A | Method for reducing leakage currents in semiconductor devices | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6624481B1 | ESD robust bipolar transistor with high variable trigger and sustaining voltages | Electricity | 10 | Expired |
| US7262109B2 | Integrated circuit having a transistor level top side wafer contact and a method of manufacture therefor | Electricity | 8 | Expired |
| US7195965B2 | Premature breakdown in submicron device geometries | Electricity | 6 | Expired |
| US4042947A | High voltage transistor with high gain | Electricity | 6 | Expired |
| US4112362A | Method for the nondestructive testing of voltage limiting blocks | Physics | 5 | Expired |
| US8643099B2 | Integrated lateral high voltage MOSFET | Electricity | 5 | Active |
| US8728846B2 | Vertical thermoelectric structures | Electricity | 5 | Active |
| US7417270B2 | Distributed high voltage JFET | Electricity | 5 | Expired |
| US6815276B2 | Segmented power MOSFET of safe operation | Electricity | 4 | Expired |
| US7846789B2 | Isolation trench with rounded corners for BiCMOS process | Electricity | 4 | Active |
| US8853029B2 | Method of making vertical transistor with graded field plate dielectric | Electricity | 4 | Active |
| US8878330B2 | Integrated high voltage divider | Electricity | 3 | Active |
| US9349933B2 | Vertical thermoelectric structures | Electricity | 3 | Active |
| US6878999B2 | Transistor with improved safe operating area | Electricity | 3 | Expired |
| US7605412B2 | Distributed high voltage JFET | Electricity | 3 | Active |
| US9985095B2 | Lateral MOSFET with buried drain extension layer | Electricity | 2 | Active |
| US7989853B2 | Integration of high voltage JFET in linear bipolar CMOS process | Electricity | 2 | Active |
| US8278683B2 | Lateral insulated gate bipolar transistor | Electricity | 2 | Active |
| US7345343B2 | Integrated circuit having a top side wafer contact and a method of manufacture therefor | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.