Bipolar transistor structure having low saturation resistance
US4047220A · kind A · utility
16Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 24, 1975 |
| Grant date | Sep 6, 1977 |
| Priority date | — |
| Expiry date | Dec 24, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/642
Abstract
A triple diffused interdigitated NPN transistor formed in an isolated N-epitaxial pocket of an otherwise standard NPN bipolar junction isolated integrated circuit. The N-type diffused collector pocket in the N-epitaxial layer lowers collector resistance of the triple diffused NPN device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.