Process for thinning silicon with special application to producing silicon on insulator
US4050979A · kind A · utility
11Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 1976 |
| Grant date | Sep 27, 1977 |
| Priority date | — |
| Expiry date | Jan 14, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This disclosure relates to methods of producing thin layers of silicon as well as thin layers of silicon on insulating substrates such as silicon dioxide or polycrystalline silicon by forming either an n- layer of single crystal silicon over a p++ layer of single crystal silicon or a p- layer of single crystal silicon over an n++ layer of single crystal silicon and then removing either the n++ or p++ single crystal substrate, as the case may be, by utilizing an etch which will only etch the n++ or p++ region and will stop when the n- or p- region, as the case may be, has been reached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.