Negative resist for X-ray and electron beam lithography and method of using same
US4061829A · kind A · utility
27Cited by
6References
41Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 26, 1976 |
| Grant date | Dec 6, 1977 |
| Priority date | — |
| Expiry date | Apr 26, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31667
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A class of chlorinated or brominated polymeric negative resists for high resolution X-ray or electron lithographic processes is described. Chlorine and bromine atoms have a generally high mass absorption coefficient for X-rays and can be incorporated into the polymer in high weight percents. The chlorinated resists are especially sensitive to the 4.37 Angstrom characteristic X-rays from a Pd target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.