Gary N. Taylor
34Patents
14h-index
33Co-inventors
81Inventor score
Filing activity: Nov 18, 1974 → Apr 11, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5736424A | Device fabrication involving planarization | Electricity | 107 | Expired |
| US5750312A | Process for fabricating a device | Emerging Cross-Sectional Technologies | 57 | Expired |
| US4683024A | Device fabrication method using spin-on glass resins | Emerging Cross-Sectional Technologies | 42 | Expired |
| US4396704A | Solid state devices produced by organometallic plasma developed resists | Emerging Cross-Sectional Technologies | 38 | Expired |
| US4377437A | Device lithography by selective ion implantation | Electricity | 35 | Expired |
| US5487967A | Surface-imaging technique for lithographic processes for device fabrication | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6136501A | Polymers and photoresist compositions comprising same | Emerging Cross-Sectional Technologies | 29 | Expired |
| US4061829A | Negative resist for X-ray and electron beam lithography and method of using same | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6057083A | Polymers and photoresist compositions | Emerging Cross-Sectional Technologies | 26 | Expired |
| US4185202A | X-ray lithography | Physics | 19 | Expired |
| US5550007A | Surface-imaging technique for lithographic processes for device fabrication | Emerging Cross-Sectional Technologies | 19 | Expired |
| US4400235A | Etching apparatus and method | Electricity | 16 | Expired |
| US5212047A | Resist material and process for use | Physics | 15 | Expired |
| US5215867A | Method with gas functionalized plasma developed layer | Physics | 15 | Expired |
| US4232110A | Solid state devices formed by differential plasma etching of resists | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5876899A | Photoresist compositions | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5508144A | Process for fabricating a device | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6379861B1 | Polymers and photoresist compositions comprising same | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6165674A | Polymers and photoresist compositions for short wavelength imaging | Emerging Cross-Sectional Technologies | 9 | Expired |
| US4059340A | Doped liquid crystal display device | Physics | 8 | Expired |
| US6858379B2 | Photoresist compositions for short wavelength imaging | Emerging Cross-Sectional Technologies | 7 | Expired |
| US4981770A | Process for fabrication of device | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6884564B2 | Fluorinated polymers having ester groups and photoresists for microlithography | Emerging Cross-Sectional Technologies | 7 | Expired |
| US4225664A | X-ray resist containing poly(2,3-dichloro-1-propyl acrylate) and poly(glycidyl methacrylate-co-ethyl acrylate) | Emerging Cross-Sectional Technologies | 6 | Expired |
| US4500628A | Process of making solid state devices using silicon containing organometallic plasma developed resists | Emerging Cross-Sectional Technologies | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.