FET and bipolar device and circuit process with maximum junction control
US4063271A · kind A · utility
33Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1972 |
| Grant date | Dec 13, 1977 |
| Priority date | — |
| Expiry date | Jul 26, 1992 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are improved field-effect and bipolar semiconductor devices and the method of making them, wherein maximum junction control provides highly predictable device parameters. Low temperature epitaxial depositions provide tight junction thickness and resistivity control, and an orientation dependent etch forms grooves circumscribing portions of the host substrate and overlying epitaxial layers to provide dielectrically isolated single crystalline mesas utilized in forming electronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.